DatasheetsPDF.com

2SJ539

Hitachi Semiconductor
Part Number 2SJ539
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ539 PDF File

2SJ539
2SJ539

Overview
2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
16 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.
5 40 150...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)