2SJ535
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-627B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.028 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
TO–220FM
D
G
S
1 2
1. Gate 2. Drain 3. Source
3
2SJ535
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage G...
