2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.08 Ω typ. 4V gate drive devices. High speed switching.
Outline
DPAK–2
4 D
4
1 2 G
3
1 2 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Dr...
