Silicon P-Channel MOSFET
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Feature...
Description
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.08 Ω typ. 4V gate drive devices. High speed switching.
Outline
DPAK–2
4 D
4
1 2 G
3
1 2 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –15 –60 –15
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–15 19 30 150 –55 to +150
EAR
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min –60 ±20 — — –1.0 — — 6.5 — — — — — — — — — Typ — — —...
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