2SJ528

2SJ528(L),2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features Low on-resistance RDS(on) = 0.17 Ω typ. 4 V gete drive devices High speed switching Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –7 –28 –7 –7 4.2 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 3.0 — — — — — — — — — Typ — — — — — 0.17 0.24 5.0 400 220 75 10 40 75 65 –1.1 65 Max — — –10 ±10 –2.0 0.22 0.37 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –7A, VGS = 0 I F = –7A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –4A, VGS = –10V Note4 I D = –4A, VGS = –4V Note4 I D = –4A, VDS = –10V VDS = –10V VGS = 0 f = 1MHz VGS = –10V, ID = –4A RL = 7.5Ω Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero...