2SJ526
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-579B (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.11 Ω typ. Low drive current 4 V gete drive devices High speed switching
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SJ526
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate ...
