2SJ517

2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) Low drive current High speed switching 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –20 ±10 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 ±10 — — –0.5 — — 1.8 — — — — — — — — — Typ — — — — — 0.18 0.27 3.0 320 190 90 14 75 90 90 –0.95 70 Max — — –10 ±10 –1.5 0.24 0.43 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –2A, VGS = 0 I F = –2A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –20 V, VGS = 0 VGS = ±8V, VDS = 0 I D = –1mA, VDS = –10V I D = –1A, VGS = –4VNote3 I D = –1A, VGS = –2.5V Note3 I D = –1A, VDS = –10V Note3 VDS = –10V VGS = 0 f = 1MHz I D = –1A, RL = 10Ω VGS = –4V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...