2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) Low drive current High speed switching 4V gate drive devices.
Outline
DPAK–2
4 D
4
1 2 G
3
1 2 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ506(L)...
