2SJ506

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) Low drive current High speed switching 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 65 110 16 660 440 140 12 65 85 65 –1.05 65 Max — — –10 ±10 –2.0 85 180 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = –10A, VGS = 0 I F = –10A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –5A, VGS = –10VNote3 I D = –5A, VGS = –4V Note3 I D = –5A, VDS = –10V Note3 VDS = –10V VG...