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2SJ505

P-Channel MOSFET

Description

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features Low on-resistance R DS(on) = 0.017Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolute Maximum...

Hitachi Semiconductor

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