2SJ495

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 FEATURES Super Low On-State Resistance 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A) Low Ciss Ciss = 4120 pF TYP. Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature *f = 20 kHz, Duty Cycle ≤ 10% (+Side) **PW ≤ 10 µs, Duty Cycle ≤ 1% VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg –60 m20 –20, 0 m30 m120 35 2.0 150 –55 to +150 V V V A A W W °C °C 1 2 3 0.7 ± 0.1 2.54 13.5 MIN. 2.5 ± 0.1 0.65 ± 0.1 1. Gate 2. Drain 3. Source Drain Body Diode Source 1.3 ± 0.2 1.5 ± 0.2 2.54 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-A) 3.57 62.5 °C/W °C/W MP-45F (ISOLATED TO-220) Gate Gate Protection Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11267EJ2V0...