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2SJ486 Dataheets PDF



Part Number 2SJ486
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description P-Channel MOSFET
Datasheet 2SJ486 Datasheet2SJ486 Datasheet (PDF)

2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle.

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2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings –30 ±10 –0.3 –0.6 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±10 — — –0.5 — Typ — — — — — 0.5 Max — — –1.0 ±5.0 –1.5 0.65 Unit V V µA µA V Ω Ω S Test Conditions I D = –10µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = –10µA, VDS = –5V I D = –100mA VGS = –4V*1 — 0.7 1.2 I D = –40mA VGS = –2.5V*1 Forward transfer admittance |yfs| Ciss Coss 0.4 0.65 — I D = –100mA VDS = –10V*1 Input capacitance Output capacitance — — — — — — — 45 76 5.4 120 340 850 550 — — — — — — — pF pF pF ns ns ns ns VDS = –10V VGS = 0 f = 1MHz VGS = –4V I D = –150mA RL = 66.6Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Notes: 1. Pulse test 2. Marking is “ZU–”. t d(on) tr t d(off) tf 2 2SJ486 Main Characteristics Power vs. Temperature Derating 200 Pch (mW) I D (A) –1 Maximum Safe Operation Area PW 1 ms –0.3 –0.1 –0.03 –0.01 150 = (1 10 sh ms ot ) D C O Channel Dissipation Drain Current 100 Operation in this area is limited by R DS(on) pe ra tio n 50 –0.003 –0.001 –0.1 Ta = 25 °C –0.3 –1 –3 –10 –30 –100 0 50 100 150 Ta (°C) 200 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics –1.0 –10 V –1.0 –5 V –4 V I D (A) Typical Transfer Characteristics V DS = –10 V Pulse Test –2.5 V –2 V ID (A) –0.8 –0.8 –0.6 –0.6 Drain Current Drain Current Tc = 75 °C 25 °C –25 °C –0.4 Ta = 25°C Pulse Test VGS = –1.5 V 0 –0.2 –0.4 –0.6 Drain to Source Voltage –0.8 –1.0 V DS (V) –0.4 –0.2 –0.2 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 3 2SJ486 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Ta = 25°C Pulse Test 5 2 1 VGS = –2.5 V –4 V Drain to Source Saturation Voltage V DS(on) (V) Ta = 25°C Pulse Test –0.4 –0.3 –0.2 –0.2 A –0.1 A 0 –2 –4 –6 Gate to Source Voltage –8 V GS (V) –10 –0.1 Drain to Source On State Resistance R DS(on) ( Ω ) –0.5 0.5 0.2 0.1 –0.01 –0.03 –0.1 –0.3 –1 –3 –10 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.4 –0.1, –0.2 A 1.2 V GS = –2.5 V –0.1, –0.2 A –4 V Forward Transfer Admittance vs. Drain Current 5 V DS = –10 V Pulse Test 2 1 0.5 75 °C 0.2 0.1 0.05 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 Drain Current I D (A) Ta = –25 °C 25 °C 0.8 0.4 0 –40 0 40 80 120 160 Case Temperature Tc (°C) –1 4 2SJ486 Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 10 Crss 3 1 0 –4 –8 –12 –16 –20 Drain to Source Voltage V DS (V) VGS = 0 f = 1 MHz Switching Time t (ns) 10000 3000 1000 300 100 30 10 –0.05 tf tr t d(on) t d(off) Switching Characteristics Capacitance C (pF) Coss Ciss V GS = –4 V, V DD = –10 V PW = 5 µs, duty < 1 % –0.1 –0.2 Drain Current –0.5 I D (A) –1 Reverse Drain Current vs. Source to Drain Voltage –1.0 Reverse Drain Current I DR (A) Pulse Test –0.8 –0.6 –5 V –0.4 V GS = 0, 5 V –0.2 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5 2SJ486 Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin –10 V 50 Ω V DD = –10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveform 6 2SJ486 Package Dimensions Unit: mm 0.65 – 0.3 + 0.1 0.4 – 0.05 + 0.10 0.16 – 0.06 + 0.10 2.8 – 0.6 + 0.2 0.95 1.9 0.95 + 0.3 2.8 – 0.1 0.3 0.65 – 0.3 + 0.1 1.5 0 ~ 0.1 1.1– 0.1 + 0.2 MPAK Hitachi Code SC–59A EIAJ TO–236Mod JEDEC 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3.


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