2SJ483

2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) 4V gate drive devices. Large current capacitance ID = –5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –30 ±20 –5 –20 –5 0.9 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg 2 2SJ483 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min –30 ±20 — — –1.0 — — 3 — — — — — — — — — Typ — — — — — 0.08 0.12 5 630 390 135 15 70 65 60 –1.0 60 Max — — –10 ±10 –2.0 0.11 0.17 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns...