2SJ461

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES Can be driven by a 2.5 V power source Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. 2.9 ±0.2 0.95 0.95 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 1.1 to 1.4 0.3 0.16 ORDERING INFORMATION PART NUMBER 2SJ461 Marking: H19 PACKAGE SC-59 (Mini Mold) 0 to 0.1 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −50 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation VGSS ID(DC) ID(pulse) PT m7.0 m0.1 m0.2 200 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V A A mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may ...