2SJ452

2SJ452 Silicon P-Channel MOS FET ADE-208-383 1st. Edition Application Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ452 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZM–". Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings –50 ±20 –0.2 –0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –50 ±20 — — –0.5 — — 0.1 — — — — — — — Typ — — — — — 5.0 7.5 0.19 1.1 15.7 0.12 0.45 1.3 8.4 5.6 Max — — –1.0 ±2.0 –1.5 7.0 12.0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test conditions I D = –100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = –40 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = –10 µA, VDS = –5 V I D = –100 mA VGS = –4 V*1 I D = –40 mA VGS = –2.5 V*1 I D = –100 mA*1 VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –0.1 A RL = 300 Ω Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacit...