P-Channel MOSFET
2SJ451
Silicon P-Channel MOS FET
ADE-208-382 1st. Edition
Application
Low frequency power switching
Features
• • • • ...
Description
2SJ451
Silicon P-Channel MOS FET
ADE-208-382 1st. Edition
Application
Low frequency power switching
Features
Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK).
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
2SJ451
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZK–". Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg
1
Ratings –20 ±20 –0.2 –0.4 150 150 –55 to +150
Unit V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –20 ±20 — — –0.5 — — 0.13 — — — — — — — Typ — — — — — 2.3 5.0 0.23 2.4 31 0.6 0.17 0.68 3.0 2.8 Max — — –1.0 ±2.0 –1.5 3.5 9.0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test conditions I D = –100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = –16 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = –10 µA, VDS = –5 V I D = –100 mA VGS = –4 V*1 I D = –40 mA VGS = –2.5 V*1 I D = –100 mA*1 VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –0.1 A RL = 100 Ω
Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacitan...
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