2SJ410

2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st. Edition Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –200 ±20 –6 –24 –6 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ410 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –200 ±20 — — –2.0 — 2.0 — — — — — — — — — Typ — — — — — 0.7 3.2 900 280 65 18 50 90 40 –1.0 220 Max — — ±10 –250 –4.0 0.85 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = –6 A, VGS = 0 I F = –6 A, VGS = 0, diF/dt = 50 A/µs Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS =–160 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –3 A VGS = –10 V*1 I D = –3 A VDS = –10 V*1 VDS = –10 V VGS = 0 f = 1 MHz I D = –3 A VGS = –10 V RL = 6Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static dr...