2SJ399

2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Marking is “ZF–” Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings –30 ±20 –0.2 –0.4 –0.2 150 150 –55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –30 ±20 — — –1.0 — — Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss t d(on) tr t d(off) tf — — — — — — — Typ — — — — — 2.7 2.0 1.1 22.3 0.17 530 2170 7640 7690 Max — — ±2 –1 –2.0 5.0 3.0 — — — — — — — Unit V V µA µA V Ω Ω pF pF pF ns ns ns ns Test conditions I D = –100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –30 V, VGS = 0 I D = –10 µA, VDS = –5 V I D = –20 mA VGS = –4 V*1 I D = –10 mA VGS = –10 V*1 VDS = –10 V VGS = 0 f = 1 MHz I D = –0.1 A VGS = –10 V RL = 100 Ω PW...