2SJ386

2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ386 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings –30 ±20 –3 –5 –3 0.9 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –30 ±20 — — –1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.0 — — — — — — — Typ — — — — — 0.3 0.55 1.7 177 120 59 8 28 45 60 Max — — ±10 –10 –2.5 0.4 0.8 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –24 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –2 A VGS = –10 V*1 I D = –2 A VGS = –4 V*1 I D = –1 A VDS = –10 V*1 VDS = –10 V VGS = 0 f = 1 MHz I D = –2 A ...