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2SJ361

Hitachi Semiconductor
Part Number 2SJ361
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed ...
Datasheet PDF File 2SJ361 PDF File

2SJ361
2SJ361

Overview
2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.
5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –20 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value on the alumina ceramic board...


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