2SJ353

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching converters. characteristics and is ideal for driving the actuators and DC/DC PACKAGE DIMENSIONS (in mm) 7.0 MAX. 2.0 1.2 9.0 MAX. 0.55 ±0.1 4.0 MAX. 12.0 MIN. 0.8 ±0.1 0.6 ±0.1 FEATURES Radial taping supported Can be directly driven by output of 5-V IC Low ON resistance RDS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A 0.6 ±0.1 0.6 ±0.1 1.7 1.7 GD S EQUIVALENT CIRCUIT Drain (D) 1.5 Gate (G) Gate protection diode Source (S) 3.0 MAX. Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 1 % VGS = 0 VDS = 0 TEST CONDITIONS RATING –60 ± 20/+10 ± 1.5 ± 3.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 1.0 150 –55 to +150 W ˚C ˚C Document No. D11216EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 2SJ353 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Sourc...