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2SJ350

Hitachi Semiconductor
Part Number 2SJ350
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ350 Silicon P-Channel MOS FET ADE-208-138 1st. Edition Application High speed power switching Features • • • • • L...
Datasheet PDF File 2SJ350 PDF File

2SJ350
2SJ350

Overview
2SJ350 Silicon P-Channel MOS FET ADE-208-138 1st.
Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SJ350 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –12...


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