2SJ316

Ordering number:EN4309 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ316] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Marking : JG Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=–1mA, VGS=0 VDS=–12V, VGS=0 VGS=±12V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–500mA, VGS=–4V 0.4 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Ratings –12 ±15 –1 –4 3.5 1.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit –12 V –100 µA ±10 µA –1.0 –2.0 V 0.7 1.2 S 0.3 0.42 Ω 0.45 0.63 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such ...