2SJ274

Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ274] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Conditions PW≤10µs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tc=25°C Tch Tstg Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–100V, VGS=0 VGS=±12V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–8A ID=–8A, VGS=–10V ID=–8A, VGS=–4V 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings –100 ±15 –12 –48 2.0 30 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit –100 V ±15 V –100 µA ±10 µA –1.0 –2.0 V 7.5 13 S 120 160 mΩ 160 220 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can han...