2SJ248
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SJ248
Absolute Maximum Ratings (Ta = 25°C)
...
