2SJ222

2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ222 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –20 –80 –20 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ222 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –100 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.5 — — — — — — — — — Typ — — — — — 0.12 0.16 12 1800 680 145 15 115 320 170 –1.05 280 Max — — ±10 –250 –2.0 0.16 0.22 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –20 A, VGS = 0 I F = –20 A, VGS = 0, diF/dt = 50 A/µs I D = –10 A, VGS = –10 V, RL = 3 Ω Unit V V µA µA V Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –10 A, VGS = –10 V*1 I D = –10 A, VGS = –4 V*1 I D = –10 A, VDS...