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2SJ186

Hitachi Semiconductor

P-Channel MOSFET


Description
2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volt...



Hitachi Semiconductor

2SJ186

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