2SJ185

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOSFET FOR SWITCHING The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ185 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and headphone stereos which need power saving. FEATURES Directly driven by ICs having a 3 V power supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. Complementary to 2SK1399 ORDERING INFORMATION PART NUMBER 2SJ185 Marking: H12 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 0.16 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −50 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation VGSS ID(DC) ID(pulse) PT m7.0 m100 m200 200 Storage Temperature Tstg −55 to +150 V V mA mA mW °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a v...