2SJ175
Silicon P-Channel MOS FET
November 1996 Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SJ1...
