2SJ148

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications 2SJ148 Unit: mm Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) Low on resistance: RDS (ON) = 1.3 Ω (typ.) Enhancement-mode Complementary to 2SK982 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse ID −200 mA IDP −800 JEDEC TO-92 Drain power dissipation (Ta = 25°C) PD 400 mW JEITA SC-43 Channel temperature Tch 150 °C TOSHIBA 2-5F1H Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of Weight: 0.21 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown volta...