TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
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TOSHIBA Field Effect
Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
Unit: mm
· Recommended for first stages of EQ amplifiers and MC head amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
· Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz)
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Complementary to 2SK370 · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
25 -10 200 125 -55~125
Electrical Characteristics (Ta = 25°C)
Unit
V mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
IGSS
VGS = 25 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 mA
IDSS (Note)
VDS = -10 V, VGS = 0
VGS (OFF) ïYfsï Ciss Crss
NF (1)
VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz
NF (2)
VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz
Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA
Min Typ. Max Unit
¾ ¾ 1.0 nA
25 ¾ ¾
V
-2.6 ¾ -20 mA
0.15 ¾
2.0
V
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