2SJ108

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Complementary to 2SK370 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 200 125 -55~125 Electrical Characteristics (Ta = 25°C) Unit V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz NF (2) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA Min Typ. Max Unit ¾ ¾ 1.0 nA 25 ¾ ¾ V -2.6 ¾ -20 mA 0.15 ¾ 2.0 V 8...