2SJ104

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 400 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = 25 V, VDS = 0 VDS = 0, IG = 100 mA ¾ ¾ 1.0 nA 25 ¾ ¾ V IDSS VDS = -10 V, VGS = 0 (Note 1) -2.6 ¾ -20 mA VGS (OFF) VDS = -10 V, ID = -0.1 mA 0.2 ¾ 2.0 V VDS = -10 V, VGS = 0, f = 1 kHz ïYfsï 12 30 ¾ mS (Note 2) Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 105 ¾ Crss VDG = -10 V, ID = 0, f = 1 MHz ¾ 32 ¾ RDS (ON) VDS = -10 mV, VGS = 0 (Note 2) ¾ 40 ¾ pF pF W Note 1: IDSS classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA Note 2: Condition of the typical value IDSS = -5 mA 1 2003-03-25 2SJ104 2 2003-03-25 2SJ104 3 2003-03-25 2SJ104 4 2003-03-25 2SJ...