2SJ103

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) Complimentary to 2SK246 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 -10 300 125 -55~125 Unit V mA mW °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1C Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Symbol IGSS V (BR) GDS IDSS (Note) VGS (OFF) ïYfsï RDS (ON) Ciss Crss Test Condition VGS = 30 V, VDS = 0 VDS = 0, IG = 100 mA VDS = -10 V, VGS = 0 VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 mV, VGS = 0, IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Min ¾ 50 -1.2 0.3 1.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 4.0 270 18 3.6 Max 1.0 ¾ -14 6.0 ¾ ¾ ¾ ¾ Unit nA V mA V mS W pF pF Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA 1 2003-03-25 Free Datasheet http://www.Datasheet4U.com 2SJ103 2 2003-03-25 Free Datasheet http://www.Datasheet4U.co...