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2SH30

Part Number	2SH30
Manufacturer	Hitachi Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SH30 Silicon N Channel IGBT High Speed Power Switching ADE-208-792A(Z) 2nd. Edition May 1999 Features • High speed swi...
Datasheet	2SH30 PDF File

Overview

2SH30 Silicon N Channel IGBT High Speed Power Switching ADE-208-792A(Z) 2nd.
Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–3P C G E 1 2 3 1.
Gate 2.
Collector (Flange) 3.
Emitter 2SH30 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1.
Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 50 100 100 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — —...

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