2SH29

2SH29 Silicon N Channel IGBT High Speed Power Switching ADE-208-791A(Z) 2nd. Edition May 1999 Features High speed switching Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 30 60 75 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 — — — — — — Typ — — — 2.1 1850 200 310 300 520 Max 100 ±1 8.0 2.6 — — — 600 1040 Unit µA µA V V pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ± 20 V, VCE = 0 I C = 30 mA, VCE = 10V I C = 30 A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz I C = 30 A RL = 10 Ω VGS = ±15V Rg = 50 Ω Gate to emitter cutoff voltage VGE(off) Collector to emitter saturation VCE(sat) voltage Input capacitance Switching time Cies tr t on tf t off 2 2SH29 Main Characteristics Power vs. Temperature Derating 80 Pch (W) I C (A) 100 30 10 3 DC Maximum Safe Operation Area 10 60 0µ s 1 s m Channel Dissipation 40 Collector Current 1 0.3 0.1 0.03 PW = m 10 s( on Op er ati 20 (T c= 1s ho t) °C 25 0 0.01 50 100 150 200 Case Temperature Tc (°C) 1 Ta = 25 °C 3 10 30 100 300 1000 Collector to Emitte...