2SH16

ADE–208–289 (Z) 2SH16 Silicon N-Channel IGBT 1st. Edition Nov. 1994 Application High speed power switching TO–3PL Features 2 High speed switching Low on saturation voltage 1 3 1 2 1. Gate 2. Collector 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH16 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ — Max — Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0 ——————————————————————————————————————————— ——————————————————————————————————————————— — — 0.5 mA ——————————————————————————————————————————— — 3.0 — — — 2...