Ordering number:ENN678F
2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Tr...
Ordering number:ENN678F
2SB776 :
PNP Epitaxial Planar Silicon
Transistor 2SD896 :
NPN Triple Diffused Planar Silicon
Transistor
2SB776/2SD896
100V/7A, AF 40W Output Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896.
Package Dimensions
unit:mm 2022A
[2SB776/2SD896]
3.5 15.6 14.0 2.6 3.2 4.8 2.0
1.6
2.0 20.0 0.6
1.0 1 0.6 2 3
1.3
1.2 15.0 20.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 ; Emitter SANYO : TO-3PB
Ratings (–)120 (–)100 (–)6 (–)7 (–)11 70 150 –55 to +150 Unit V V V A A W
˚C ˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)4A VCE=(–)5V, IC=(–)1A VCB=(–)10...