2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outli...
2SD669, 2SD669A
Silicon
NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
2SD669 180 120 5 1.5 3 1 20 150 –55 to +150
2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150
Unit V V V A A W W °C °C
2
2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
1
2SD669A Max — — — 10 320 — 1 1.5 — — Min 180 160 5 — 60 30 — — — — Typ — — — — — — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz
Min 180 120 5 — 60 30 — — — —
Typ — — — — — — — — 140 14
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output ...