2SD662

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 V 2.5 2.5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD662 2SD662B (Ta=25˚C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 100V, IB = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit µA V V Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 4.1±0.2 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as ...