2SD602A

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 2.9 –0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 1.1 –0.1 60 25 50 5 1 500 200 150 –55 ~ +150 V emitter voltage 2SD602A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : W(2SD602) X(2SD602A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD602 2SD602A 2SD602 2SD602A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 30 max 0.1 0.16 –0.06 Ratings Unit +0.2 +0.1 1.45 Unit µA V 30 60 25 ...