CXK5V81000ATM-10LLX

CXK5V81000ATM -85LLX/10LLX 131072-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high speed. The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up. Features Extended operating temperature range: –25 to +85°C Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) Low standby current: 28µA (Max.) Low data retention current: 24µA (Max.) Single 3.3V supply: 3.3V ± 0.3V Low voltage data retention: 2.0V (Min.) Package 8mm × 20mm 32 pin TSOP package Function 131072-word x 8-bit static RAM Structure Silicon gate CMOS IC 32 pin TSOP (Plastic) Block Diagram A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 Buffer Row Decoder Memory Matrix 1024 × 512 VCC GND A6 A5 A4 A3 A2 A1 A0 OE WE CE1 CE2 Buffer I/O Gate Column Decoder Buffer I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any pro...