CXK5T8512TN-12LLX

CXK5T8512TM/TN -10LLX/12LLX 65536-word × 8-bit High Speed CMOS Static RAM Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up. Features Extended operating temperature range: –25 to +85°C Wide supply voltage range operation: 2.7 to 3.6V Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-10LLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX 100ns (Max.) Low standby current: 14µA (Max.) Low data retention current: 12µA (Max.) Low power data retention: 2.0V (Min.) Package line-up CXK5T8512TM 8mm × 20mm 32 pin TSOP package CXK5T8512TN 8mm × 13.4mm 32 pin TSOP package Function 65536-word × 8-bit static RAM Structure Silicon gate CMOS IC Preliminary CXK5T8512TN 32 pin TSOP (Plastic) For the availability of this product, please contact the sales office. CXK5T8512TM 32 pin TSOP (Plastic) Block Diagram A15 A13 A8 A11 A9 A7 A6 A5 A14 A12 Buffer Row Decoder Memory Matrix 1024 × 512 VCC GND A4 A3 A10 A0 A2 A1 OE Buffer I/O Gate Column Decoder Buffer WE CE1 CE2 I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, i...