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CXK5T8257BTM Dataheets PDF



Part Number CXK5T8257BTM
Manufacturers Sony Corporation
Logo Sony Corporation
Description 32768-word X 8-bit High Speed CMOS Static RAM
Datasheet CXK5T8257BTM DatasheetCXK5T8257BTM Datasheet (PDF)

CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word × 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and high speed. The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply vo.

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CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word × 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and high speed. The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • Low standby current: 7.0µA (Max.) • Low power data retention: 2.0V (Min.) • Available in many packages CXK5T8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5T8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK5T8257BTM 28 pin TSOP (Plastic) CXK5T8257BYM 28 pin TSOP (Plastic) CXK5T8257BM 28 pin SOP (Plastic) Block Diagram A14 A13 A12 A11 A9 A8 A7 A6 A5 Buffer Row Decoder Memory Matrix 512 × 512 VCC GND A10 A4 A3 A2 A1 A0 Buffer I/O Gate Column Decoder OE Buffer WE I/O Buffer CE I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– PE96509-ST CXK5T8257BTM/BYM/BM Pin Configuration (Top View) OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 A14 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 A3 A4 A5 A6 A7 A12 A14 VCC WE A13 A8 A9 A11 OE 7 6 5 4 3 2 1 28 27 26 25 24 23 22 8 9 10 11 12 13 14 15 16 17 18 19 20 21 A2 A1 A0 I/O1 I/O2 I/O3 GND I/O4 I/O5 I/O6 I/O7 I/O8 CE A10 I/O1 11 I/O2 12 I/O3 13 GND 14 28 VCC 27 WE 26 A13 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O8 18 I/O7 17 I/O6 16 I/O5 15 I/O4 Pin Description Symbol A0 to A14 I/O1 to I/O8 CE WE OE VCC GND Description Address input Data input/output Chip enable input Write enable input Output enable input Power supply Ground CXK5T8257BTM (Standard Pinout) CXK5T8257BYM (Standard Pinout) CXK5T8257BM Absolute Maximum Ratings Item Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time Symbol VCC VIN VI/O PD Topr Tstg Tsolder (Ta = 25°C, GND = 0V) Rating –0.5 to +4.6 –0.5∗1 to VCC + 0.5 –0.5∗1 to VCC + 0.5 0.7 –25 to +85 –55 to +150 235 · 10 Unit V V V W °C °C °C · s ∗1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns. Truth Table CE H L L L OE × H L × WE × H H L Mode Not selected Output disable Read Write I/O1 to I/O8 High Z High Z Data out Data in VCC Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 ×: "H" or "L" –2– CXK5T8257BTM/BYM/BM DC Recommended Operating Conditions Item Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL VCC = 2.7 to 3.6V Min. 2.7 2.4 –0.3∗1 Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.4 Min. 3.0 2.2 –0.3∗1 (Ta = –25 to +85°C, GND = 0V) VCC = 3.3V ± 0.3V Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.6 V Unit ∗1 VIL=–3.0V Min. for pulse width less than 50ns. Electrical Characteristics • DC characteristics Item Symbol (VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C) Test Conditions VIN = GND to VCC CE = VIH OE = VIH or WE = VIL VI/O = GND to VCC CE = VIL VIN = VIH or VIL IOUT = 0mA Min. cycle duty = 100%, IOUT = 0mA CE ≥ VCC – 0.2V CE = VIH IOH = –2mA IOL = 2.0mA 10LLX 12LLX –25 to +85°C –25 to +70°C +25°C Min. –0.5 –0.5 Typ.∗2 — — Max. 0.5 0.5 µA Unit Input leakage current ILI Output leakage current ILO Operating power supply current ICC1 — — — — — — — 2.4 — 0.9 18∗3 18 — — 0.12 0.06 — — 2 mA 35∗4 35 7.0 3.5 — 0.7 — V 0.4 µA mA Average operating ICC2 current ISB1 ISB2 Output high voltage Output low voltage VOH VOL Standby current ∗2 VCC = 3.3V, Ta = 25°C ∗3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V) ∗4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V) –3– CXK5T8257BTM/BYM/BM I/O capacitance Item Input capacitance I/O capacitance Symbol Test condition CIN CI/O VIN = 0V VI/O = 0V Min. — — (Ta = 25°C, f = 1MHz) Typ. — — Max. 8 10 Unit pF pF Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test conditions Item Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level -10LLX Output load conditions -12LLX VIH = 2.4V VIL = 0.4V (Ta = –25 to +85°C) Conditions VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V VIH = 2.2V VIL = 0.6V TTL tr = 5ns tf = 5ns tr = 5ns tf = 5ns CL 1.4V 1.4V CL∗1 = 100pF, 1TTL CL∗1 = 30pF, 1TTL CL∗1 = 1.


CXK5T8257BM-12LLX CXK5T8257BTM CXK5T8257BTM-10LLX


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