CXK5T81000ATN

CXK5T81000ATN/AYN -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Description The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T81000ATN/AYN is a suitable RAM for portable equipment with battery back up. Features Extended operating temperature range: –25 to +85°C Wide supply voltage range operation: 2.7 to 3.6V Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) Low standby current: 28µA (Max.) Low data retention current: 24µA (Max.) Low power data retention: 2.0V (Min.) Package 8mm × 13.4mm 32 pin TSOP package Function 131072-word × 8-bit static RAM Structure Silicon gate CMOS IC CXK5T81000ATN 32 pin TSOP (Plastic) Preliminary CXK5T81000AYN 32 pin TSOP (Plastic) For the availability of this product, please contact the sales office. Block Diagram A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 Buffer Row Decoder Memory Matrix 1024 × 1024 VCC GND A6 A5 A4 A3 A2 A1 A0 OE Buffer I/O Gate Column Decoder Buffer WE CE1 CE2 I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsib...