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CXK5T81000ATM

Sony Corporation

131072-word x 8-bit High Speed CMOS Static RAM

CXK5T81000ATM/AYM/AM -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Description The CXK5T81000ATM/AYM/AM is...


Sony Corporation

CXK5T81000ATM

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Description
CXK5T81000ATM/AYM/AM -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Description The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with battery back up. Features Extended operating temperature range: –25 to +85°C Wide supply voltage range operation: 2.7 to 3.6V Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) Low standby current: 28µA (Max.) Low data retention current: 24µA (Max.) Low voltage data retention: 2.0V (Min.) Package line-up CXK5T81000ATM/AYM 8mm × 20mm 32 pin TSOP package CXK5T81000AM 525mil 32 pin SOP package Function 131072-word × 8-bit static RAM Structure Silicon gate CMOS IC CXK5T81000ATM 32 pin TSOP (Plastic) Preliminary CXK5T81000AYM 32 pin TSOP (Plastic) For the availability of this product, please contact the sales office. CXK5T81000AM 32 pin SOP (Plastic) Block Diagram A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 Buffer Row Decoder Memory Matrix 1024 × 1024 VCC GND A6 A5 A4 A3 A2 A1 A0 OE Buffer I/O Gate Column Decoder Buffer WE CE1 CE2 I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuit...




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