CXG1051AFN

CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET process featuring a single positive power supply operation. Features Operates at a single positive power supply: VDD = 3V Small mold package: 26-pin HSOF Low current consumption: IDD = 150mA (POUT = 20.2dBm, f = 1.9GHz) High power gain: Gp = 39dB Typ. (POUT = 20.2dBm, f = 1.9GHz) Low current consumption: IDD = 5.5mA Typ. (When no signal) High conversion gain: Gc = 20.5dB Typ. (f = 1.9GHz) Low distortion: Input IP3 = –13dBm Typ. (f = 1.9GHz) High image suppression ratio: IMR = 40dBc Typ. (f = 1.9GHz) High 1/2 IF suppression ratio: 1/2IFR = 44dBc Typ. (f = 1.9GHz) Applications Japan digital cordless telephones (PHS) Structure GaAs J-FET MMIC 26 pin HSOF (Plastic) Absolute Maximum Ratings Supply voltage VDD Voltage between gate and source VGSO Drain current IDD Allowable power dissipation PD Control voltage Supply voltage Input power 6 1.5 550 3 V V mA W VCTL 6 V VDD PRF 6 +10 V dBm Channel temperature Tch Operating temperature Topr Storage temperature Tstg 150 –35 to +85 –65 to +150 °C...