CXG1045N

CXG1045N High Power DPDT Switch for GSM For the availability of this product, please contact the sales office. Description The CXG1045N is a DPDT (Dual Pole Dual Throw) antenna switch MMIC used in personal communication handsets such as GSM, GSM1800 or dualband. This IC is designed using the Sony's GaAs J-FET process. Features Low insertion loss: 8 pin SSOP (Plastic) 0.4dB (Typ.) @900MHz 0.7dB (Typ.) @1.8GHz High power switching P1dB: 38dBm (Typ.) @900MHz 37dBm (Typ.) @1.8GHz Small package SSOP-8pin: (3 × 6.4 × 1.25mm) Low current: 200µA (Typ.) Application GSM900 or GSM1800 handsets GSM900/GSM1800 dualband handsets Structure GaAs J-FET MMIC Operating Condition Control voltage: Vctl (H) – Vctl (L): 2.5 to 5V @Ta = 25°C ∗ GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E98902A92-PS CXG1045N Block Diagram RF1 RF4 RF2 RF3 VCTLA High Low VCTLB Low High RF1 – RF2, RF3 – RF4 ON RF2 – RF3, RF4 – RF1 OFF RF1 – RF2, RF3 – RF4 OFF RF2 – RF3, RF4 – RF1 ON Electrical Characteristics (1) Item Insertion loss Symbol ∗3, ∗4 IL ∗1, ∗2, ∗5 ∗3, ∗4 Isola...