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CXA1753M Dataheets PDF



Part Number CXA1753M
Manufacturers Sony Corporation
Logo Sony Corporation
Description I-V Photo IC for CD Player
Datasheet CXA1753M DatasheetCXA1753M Datasheet (PDF)

CXA1753M I-V Photo IC for CD Player For the availability of this product, please contact the sales office. Description The CXA1753M is a photo IC developed as a photodetector for the optical pickup of CD players. It has a built-in I-V amplifier, and features low output impedance for stable output. • Focus servo : astigmatic method • Tracking servo : three-spot method Features • I-V amplifier (current-voltage conversion circuit) • Compact transparent molded package (SOP) Identical to the shape of.

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CXA1753M I-V Photo IC for CD Player For the availability of this product, please contact the sales office. Description The CXA1753M is a photo IC developed as a photodetector for the optical pickup of CD players. It has a built-in I-V amplifier, and features low output impedance for stable output. • Focus servo : astigmatic method • Tracking servo : three-spot method Features • I-V amplifier (current-voltage conversion circuit) • Compact transparent molded package (SOP) Identical to the shape of conventional photodiodes Applications Optical pickup of CD players Structure Bipolar silicon monolithic IC PD-S-14 Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VCC 12 V • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –40 to +85 °C • Allowable power dissipation PD 200 mW Operating Conditions Supply voltage VCC 2.8 to 11.0 V Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E93537A79-TE CXA1753M Electrical and Optical Characteristics I Item Current consumption Output offset voltage (A-F) Symbol ICC Voff Conditions In the dark In the dark (A+B) – (C+D) In the dark (A+D) – (B+C) In the dark (A+C) – (B+D) In the dark E–F In the dark PO=10 µW, λ=780 nm PO=10 µW, λ=780 nm PO=100 µW, λ=780 nm PO=100 µW, λ=780 nm 100 kHz reference, –3 dB 10 kHz reference, –3 dB (VCC=3.0 V, VC=1.5 V, Ta=25 °C) Min. — –15 –15 –15 –15 –10 290 610 2.0 2.5 2.0 100 Typ. 2.0 0 0 0 0 0 370 770 2.2 2.9 3.0 400 Max. 2.8 15 15 15 15 10 450 930 — — — — Unit mA mV mV mV mV mV mV mV V V MHz kHz Output offset voltage difference ∆Voff Output voltage (A-D) Output voltage (E, F) Maximum output voltage (A-D) Maximum output voltage (E, F) Frequency response (A-D) Frequency response (E, F) VO VO Vomax Vomax fC fC Electrical and Optical Characteristics II Item Current consumption Output offset voltage (A-F) Symbol ICC Voff Conditions In the dark In the dark (A+B) – (C+D) In the dark (A+D) – (B+C) In the dark (A+C) – (B+D) In the dark E–F In the dark PO=10 µW, λ=780 nm PO=10 µW, λ=780 nm PO=100 µW, λ=780 nm PO=100 µW, λ=780 nm 100 kHz reference, –3 dB 10 kHz reference, –3 dB (VCC=5.0 V, VC=2.5 V, Ta=25 °C) Min. — –15 –15 –15 –15 –10 290 610 4.0 4.5 2.0 100 Typ. 3.5 0 0 0 0 0 370 770 4.2 4.9 2.5 400 Max. 4.5 15 15 15 15 10 450 930 — — — — Unit mA mV mV mV mV mV mV mV V V MHz kHz Output offset voltage difference ∆Voff Output voltage (A-D) Output voltage (E, F) Maximum output voltage (A-D) Maximum output voltage (E, F) Frequency response (A-D) Frequency response (E, F) VO VO Vomax Vomax fC fC Note 1 : VC is reference for output voltage and output offset voltage. Note 2 : GND is reference for maximum output voltage. Note 3 : Output voltage and frequency response are subject to confirmation of design. —2— CXA1753M Measurement Circuit 10kΩ 10kΩ 1 DO FO 10 10kΩ VCC 2 AO VCC 9 VC 3 NC VC 8 10kΩ 10kΩ 4 BO GND 7 10kΩ 5 CO EO 6 Photodetector position 45° 0.6 D C F AB E 1 0.52 Reference side Tolerance in position of photodetector center X, Y : ±0.2 Z : ±0.2 θ : ±2° Photodetector plane (Unit : mm) —3— CXA1753M Photodetector Pattern Dimensions 0.6±0.2mm from package center E C D 5 B 30 45° A 50 5 F 30 200 120 50 120 (Unit : µm) Circuit Block Diagram R1 DO 1 – + R2 – + 10 FO ∗F I-V AMP D I-V AMP∗ B F R1 AO 2 – + 9 VCC C A I-V AMP∗ NC 3 8 VC R1 BO 4 – + 7 GND D R2 – + B I-V AMP∗ R1 CO 5 – + 6 EO ∗E I-V AMP C I-V AMP∗ A E R1=166kΩ, R2=334kΩ A, B, C, D, E and F are photodiodes —4— CXA1753M Pin Description Pin No. Symbol I/O Equivalent circuit Description 1 2 4 5 DO AO BO CO 1 O 2 4 5 400µA 8k Vc 16k Output of voltage signals converted from optical signals. 3 NC Common with GND for the package construction. 6 10 EO FO O 6 10 100µA 16k 8k Vc Output of voltage signals converted from optical signals. 7 GND I For a dual power supply : negative power supply For a single power supply : GND For a dual power supply : GND For a single power supply : center voltage input Positive power supply 8 VC I 8 9 VCC I —5— CXA1753M Notes on Operation 1. Connection to RF amplifiers The CXA1753M features the voltage-output type and the voltage-input type such as the CXA1610M should be used as RF amplifiers. The noise tolerance will be greatly improved over that of conventional photodiodes used with current-input RF amplifiers. 2. Power supply The CXA1753M can be used either with a dual power supply or with a single power supply. However, this IC is not provided with a center voltage generating circuit, and so when used with a single power supply the center voltage must be supplied by an RF amplifier or some other device. For instance w.


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