D2089UK

TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA H B 4 3 1 G (2 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES F E D 2 C (2 p ls) A SIMPLIFIED AMPLIFIER DESIGN GATE DRAIN PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS DIM A B C D E F G H Millimetres 25.40 45° 0.76 5.21 DIA 1.02 0.13 3.18 3.18 Tol. 0.25 5° 0.05 0.13 0.13 0.02 0.13 REF Inches 1.00 45° 0.030 0.205 0.040 0.005 0.125 0.125 Tol. 0.010 5° 0.002 0.005 0.005 0.001 0.005 REF LOW NOISE HIGH GAIN APPLICATIONS HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 4W 65V ±20V 1A –65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 D2089UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs Pout Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Power Output Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V f = 30MHz VDS = 0V |D = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A IDQ =...