D2085UK

D2085UK MECHANICAL DATA TetraFET 120W – 28V – 0.8GHz B G (typ) C (2 pls) 2 1 H D 3 P (2 pls) A 5 4 E (4 pls) F I DIM A B C D E F G H I J K M N O P PIN 1 PIN 3 mm 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.61R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R DRAIN 1 GATE 2 Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 N M O J K PIN 5 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gm Ciss Coss Crss VGS(th)match Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage * Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Threshold Matching Voltage Between Sides PO = 120W f = 800MHz V = 28V I = 100mA V = 28V V = 20V I = 10mA V = 10V T = 300mS VDS = 0V V = 28V V = 28V ID = 10mA VDS = VGS VGS = -5V I = 4A 1 65 Typ. Max. Unit V 5 1 7 mA mA V mhos pF pF pF 4 215 85 4.5 0.1 V TOTAL DEVICE IDQ = 4A Thermal Resistance = 0.52 °C / W HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVI...